Quantitative Estimation of Aluminum-Induced Negative Charge Region Top Area of SiO2Based on Frequency-Dependent AC Surface Photovoltage
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors
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4. Nondestructive diagnostic method using ac surface photovoltage for detecting metallic contaminants in silicon wafers
5. Behavior of Metal-Induced Negative Oxide Charges on the Surface of N-type Silicon Wafers Using Frequency-Dependent AC Surface Photovoltage Measurements
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2. Collapse of Cr(OH)3/n-Si Schottky barrier and growth of atomic bridging-type surface photovoltages in Cr-deposited n-type Si(001) wafers;Surface and Interface Analysis;2012-02-07
3. Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air;Japanese Journal of Applied Physics;2011-11-01
4. Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air;Japanese Journal of Applied Physics;2011-10-25
5. Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces;Japanese Journal of Applied Physics;2011-08-22
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