Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Surface Photovoltage Spectroscopy—A New Approach to the Study of High-Gap Semiconductor Surfaces
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3. Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers*
4. Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Direct Observation of Au Nanoclusters at Au/Si Interface and Enhanced SiO2Growth Due to Catalytic Action by Au in Thermally Oxidized Au-Precipitated n-Type Si(001) Surfaces;Japanese Journal of Applied Physics;2013-04-01
2. Erratum: “Schottky-Barrier-Induced AC Surface Photovoltages in Au-Precipitated n-Type Si(001) Surfaces”;Japanese Journal of Applied Physics;2012-07-01
3. Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air;Japanese Journal of Applied Physics;2011-11-01
4. Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air;Japanese Journal of Applied Physics;2011-10-25
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