Impurity-Free Vacancy Diffusion of InGaAsP/InGaAsP Multiple Quantum Well Structures Using SiH4-Dependent Dielectric Cappings
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference17 articles.
1. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
2. Characteristics of intermixed InGaAs/InGaAsP Multi-Quantum-Well Structure
3. Generation of Multiple Energy Bandgaps Using a Gray Mask Process and Quantum Well Intermixing
4. Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering
5. Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs Quantum Well Laser Structures;ECS Journal of Solid State Science and Technology;2017
2. Controllable red and blue bandgap energy shifted LEDs and modulators on InGaAsP quantum well platform;Integrated Optics: Devices, Materials, and Technologies XX;2016-03-01
3. Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration;Materials Research Express;2015-08-19
4. Enhanced control over selective-area intermixing of In0.15Ga0.85As/GaAs quantum dots through post-growth exposure to radio-frequency plasma;Thin Solid Films;2011-01
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