Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration-Reference-Cited by-同舟云学术

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Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration

Published:2015-08-19 Issue:8 Volume:2 Page:086302
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Aleahmad P,Bakhshi S,Christodoulides D,LiKamWa P

Funder

Division of Electrical, Communications and Cyber Systems

Air Force Office of Scientific Research

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2053-1591/2/i=8/a=086302/pdf

Reference22 articles.

1. Interdiffusion of the group-III sublattice in In-Ga-As-P/In-Ga-As-P and In-Ga-As/In-Ga-As heterostructures

2. New encapsulant source for III–V quantum well disordering

3. Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures

4. Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiN/sub x/ capping layer

5. A universal damage induced technique for quantum well intermixing

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integrated multi-port circulators for unidirectional optical information transport;Scientific Reports;2017-05-18

2. High-power, high-efficient GaSb-based quantum well laser diodes emitting at 2 mu m;J INFRARED MILLIM W;2016

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