New encapsulant source for III–V quantum well disordering-Reference-Cited by-同舟云学术

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New encapsulant source for III–V quantum well disordering

Published:1995-01-23 Issue:4 Volume:66 Page:472-474
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rao E. V. K.,Hamoudi A.,Krauz Ph.,Juhel M.,Thibierge H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114060

Reference11 articles.

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures;Semiconductor Science and Technology;2016-07-21

2. Controllable red and blue bandgap energy shifted LEDs and modulators on InGaAsP quantum well platform;Integrated Optics: Devices, Materials, and Technologies XX;2016-03-01

3. Controllable red and blue shifting of InGaAsP quantum well bandgap energy for photonic device integration;Materials Research Express;2015-08-19

4. Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm;Journal of Applied Physics;2006-07

5. Measurements of TiOx stress induced on InP∕InGaAs∕InGaAsP quantum well heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-05

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