Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2214360
Reference15 articles.
1. Quantum‐well intermixing for optoelectronic integration using high energy ion implantation
2. Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion
3. Diode laser degradation mechanisms: A review
4. New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator
5. Selective band‐gap blueshifting of InGaAsP/InGaAs(P) quantum wells by thermal intermixing with phosphorus pressure and dielectric capping
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantitative compositional profiles of enhanced intermixing in GaAs/AlGaAs quantum well heterostructures annealed with and without a SiO2cap layer;Semiconductor Science and Technology;2009-03-10
2. Comparison of Quantum Well Interdiffusion on Group III, Group V, and Combined Groups III and V Sublattices in GaAs-Based Structures;IEEE Journal of Selected Topics in Quantum Electronics;2008
3. Impurity-Free Vacancy Diffusion of InGaAsP/InGaAsP Multiple Quantum Well Structures Using SiH4-Dependent Dielectric Cappings;Japanese Journal of Applied Physics;2007-10-09
4. Distributed Bragg reflector laser using buried SiO2 grating and self-aligned band gap tuning;Applied Physics Letters;2007-04-23
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