Hydrogenated Amorphous Silicon Thin Film Transistor Fabricated on Glass and Polyimide Substrate at 200 °C
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. The physics of amorphous-silicon thin-film transistors
2. An amorphous silicon thin film transistor fabricated at 125 °C by dc reactive magnetron sputtering
3. Effects of Plasma Enhanced Chemical Vapor Deposition Substrate Heating on the Electrical Properties of α‐Si:H Thin Film Transistors
4. Low-Temperature Process for Advanced Si Thin Film Transistor Technology
5. Stability of hydrogenated amorphous silicon thin film transistors on polyimide substrates
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1. High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation;Advanced Electronic Materials;2023-02-15
2. Low temperature growth of polycrystalline InN films on non-crystalline substrates by plasma-enhanced atomic layer deposition;Applied Surface Science;2018-11
3. Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma;Journal of Physics D: Applied Physics;2018-08-06
4. Reliability improvement of a-Si:H thin film transistors on plastic substrate with saturation in deep state after multiple bending cycles;Thin Solid Films;2013-10
5. High mechanical and electrical reliability of bottom-gate microcrystalline silicon thin film transistors on polyimide substrate;Current Applied Physics;2011-01
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