High mechanical and electrical reliability of bottom-gate microcrystalline silicon thin film transistors on polyimide substrate

Author:

Huang Jung-Jie,Chen Yung-Pei,Lien Shui-Yang,Weng Ko-Wei,Chao Ching-Hsun

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference12 articles.

1. Stability of hydrogenated amorphous silicon thin film transistors on polyimide substrates;Kavak;Solid State Electron.,2005

2. Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates;Yang;J. Vac. Sci. Technol. B.,2000

3. Stability of amorphous silicon TFTs deposited on clear plastic substrates at 250 °C to 280 °C;Long;IEEE Electron Device Lett.,2006

4. A 14.1inch AMOLED Display Using Highly Stable PECVD Based Microcrystalline Silicon TFT Backplane;Girotra,2006

5. Micro Silicon Technology for Active Matrix OLED Display;Arai,2007

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