High‐Performance Transparent Silicon Nanowire Thin Film Transistors Integrated on Glass Substrates via a Room Temperature Solution Passivation

Abstract

AbstractCatalytic synthesized ultrathin silicon nanowires (SiNWs) are ideal 1D channel materials to fabricate high‐performance transparent and low‐cost thin film transistors (TFTs) that are widely needed for flexible electronics and displays. In this work, a scalable integration of orderly array of SiNW array, with a uniform diameter of only 52 ± 4 nm, grown directly upon glass/wafer substrates, via a guided in‐plane solid–liquid–solid (IPSLS) process, and passivated by a new solution oxidizing/etching cycling technique is demonstrated. This has enabled an all‐low‐temperature (<350 °C) fabrication of high‐performance SiNW‐TFTs, achieving Ion/Ioff current ratio and subthreshold swing (SS) of >106 and 120 mV dec−1 respectively, with excellent negative and positive bias stabilities. Importantly, the SiNW‐TFTs fabricated on glasses with ITO/or metal electrodes demonstrate a high transparency of 90% or 73% respectively, making them ideal candidates for building the next generation of high aperture displays, transparent electronics, and augmented reality applications.