Characterization of Metal/High-kStructures Using Monoenergetic Positron Beams-Reference-Cited by-同舟云学术

Characterization of Metal/High-kStructures Using Monoenergetic Positron Beams

Published:2007-05-17 Issue:5B Volume:46 Page:3214-3218
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Uedono Akira,Naito Tatsuya,Otsuka Takashi,Ito Kenichi,Shiraishi Kenji,Yamabe Kikuo,Miyazaki Seiichi,Watanabe Heiji,Umezawa Naoto,Chikyow Toyohiro,Ohdaira Toshiyuki,Suzuki Ryoichi,Akasaka Yasushi,Kamiyama Satoshi,Nara Yasuo,Yamada Keisaku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric

3. Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-KMISFET with p+poly-Si Gates -A Theoretical Approach

4. Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

5. Physical and electrical properties of metal gate electrodes on HfO[sub 2] gate dielectrics

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