Impact of Cation Vacancies on Leakage Current on TiN/ZrO<sub>2</sub>/TiN Capacitors Studied by Positron Annihilation-Reference-Cited by-同舟云学术

Impact of Cation Vacancies on Leakage Current on TiN/ZrO₂/TiN Capacitors Studied by Positron Annihilation

Published:2022-12-12 Issue: Volume: Page:
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Container-title:2022 International Symposium on Semiconductor Manufacturing (ISSM)
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Author:

Uedono Akira¹^ORCID,Takahashi Naomichi¹,Hasunuma Ryu¹,Harashima Yosuke²^ORCID,Shigeta Yasuteru¹^ORCID,Ni Zeyuan³^ORCID,Matsui Hidefumi³^ORCID,Notake Akira⁴^ORCID,Kubo Atsushi³,Moriya Tsuyoshi⁵^ORCID,Michishio Koji⁶^ORCID,Oshima Nagayasu⁶^ORCID,Ishibashi Shoji⁷^ORCID

Affiliation:

1. University of Tsukuba,Faculty of Pure and Applied Science,Tsukuba,Ibaraki,Japan,305-8573

2. Graduate School of Science and Technology, Nara Institute of Science and Technology Ikoma,Nara,Japan,630-0192

3. Tokyo Electron Technology Solutions Ltd.,S-Technology Development Center,Nirasaki, Yamanashi,Japan,407-0192

4. Tokyo Electron Ltd.,SDC AI Development Department,Sapporo,Hokkaido,Japan,060-0003

5. Tokyo Electron Ltd.,Advanced Data Planning Department,Tokyo,Japan,107-6325

6. Research Institute for Measurement and Analytical Instrumentation National Institute of Advanced Industrial Science and Technology,Tsukuba, Ibaraki,Japan,305-8568

7. National Institute of Advanced Industrial Science and Technology,Research Center for Computational Design of Advanced Functional Materials,Tsukuba, Ibaraki,Japan,305-8568

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10026850/10026886/10027133.pdf?arnumber=10027133

Reference19 articles.

1. Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation

2. Characterization of HfSiON gate dielectrics using monoenergetic positron beams

3. Ab initiocalculations of electric-field-induced stress profiles for diamond/c−BN(110) superlattices

4. Characterization of Metal/High-kStructures Using Monoenergetic Positron Beams

5. Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams