Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1977194
Reference25 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
3. Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
4. Hafnium and zirconium silicates for advanced gate dielectrics
5. Thermal stability of (HfO2)x(Al2O3)1−x on Si
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