Selectively Formed Metal Organic Chemical Vapor Deposition TiSiN and Ta Barrier Metal Using Direct Contact Via Process for Sub-65 nm Interconnects-Reference-Cited by-同舟云学术

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Selectively Formed Metal Organic Chemical Vapor Deposition TiSiN and Ta Barrier Metal Using Direct Contact Via Process for Sub-65 nm Interconnects

Published:2007-04-24 Issue:4B Volume:46 Page:1947-1950
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Joo Sung Joong,Lee Han Choon,Baek In Cheol,Shim Cheonman,Hong Ji Ho,Han Jae Won,Kim Kee Ho,Kim Youngmin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference2 articles.

1. Barrier studies on porous silk semiconductor dielectric

2. Evidence of heteroepitaxial growth of copper on beta-tantalum

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis of high conformalty Ti-Six-N films using (CH3)3CCl and SiH4; density functional theory simulation and film characterization;Thin Solid Films;2024-07

2. Synthesis, structural and thermal characterisation of titanium silylamido complexes;Journal of Organometallic Chemistry;2014-12

3. Improvement of Device Performance by Optimizing the Advanced DCV Process Condition in Dual-Damascene Cu Interconnects;Journal of The Electrochemical Society;2009

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