1. Dalaver Anjum, katharine dovidenko, and alain kaloyeros low temperature inorganic chemical vapor deposition of Ti–Si–N diffusion barrier liners for giga scale copper interconnect applications;Eisenbraun;J. Vac. Sci. Technol. B,2011
2. Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier;Woo Lee;J. Vac. Sci. Technol. B,2006
3. Robust TaNx diffusion barrier for Cu-interconnect technology with sub nanometer thickness by metal-organic plasma-enhanced atomic layer deposition;Kim;J. Appl. Phys.,2005
4. Evaluation of integrity and barrier performance of atomic layer deposited WNxCy films on plasma enhanced chemical vapor deposited SiO2 for Cu metallization;Kim;Appl. Phys. Lett.,2006
5. Low temperature plasma-enhanced atomic layer deposition of thin Vanadium nitride layers for copper diffusion barriers;Rampelberg;Appl. Phys. Lett.,2013