Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
Author:
Funder
European Union
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4798337
Reference22 articles.
1. Deposition of TiN and TaN by Remote Plasma ALD for Cu and Li Diffusion Barrier Applications
2. Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
3. Atomic layer deposition of titanium nitride from TDMAT precursor
4. Application of thin nanocrystalline VN film as a high-performance diffusion barrier between Cu and SiO[sub 2]
5. Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect
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