Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
Author:
Affiliation:
1. Department of Applied Physics
2. University of Technology Eindhoven
3. Eindhoven
4. Netherlands
5. Department of Chemistry
6. University of Warwick
7. Coventry
8. UK
9. Oxford Instruments Plasma Technology
Abstract
Oxygen incorporation from the residual H2O present in the reactor background is a long-standing issue in transition metal nitride films. Energetic ions can abstract H2O from surface and later radicals reduce the metal atom to +3 oxidation state.
Funder
Stichting voor de Technische Wetenschappen
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D0NR08921D
Reference53 articles.
1. Atomic Layer Deposition of Aluminum Oxide in Mesoporous Silica Gel
2. Dispersion and distribution of titanium species bound to silica from titanium tetrachloride
3. Surface reactions in Al2O3 growth from trimethylaluminium and water by atomic layer epitaxy
4. Surface-Controlled Gas-Phase Deposition and Characterization of Highly Dispersed Vanadia on Silica
5. Properties of Aluminum Nitride Thin Films Deposited by an Alternate Injection of Trimethylaluminum and Ammonia under Ultraviolet Radiation
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Semitransparent Perovskite Solar Cells with Ultrathin Protective Buffer Layers;ACS Applied Energy Materials;2023-10-05
2. Ultrathin superconducting TaCxN1−x films prepared by plasma-enhanced atomic layer deposition with ion-energy control;Applied Physics Letters;2023-09-25
3. Nucleation of Co and Ru Precursors on Silicon with Different Surface Terminations: Impact on Nucleation Delay;The Journal of Physical Chemistry C;2023-07-07
4. Tailoring thin film transistor performance through plasma reactant manipulation in indium oxynitride films;Journal of Materials Chemistry C;2023
5. Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture;International Journal of Molecular Sciences;2022-12-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3