A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions-Reference-Cited by-同舟云学术

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A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

Published:1980-05 Issue:5 Volume:19 Page:L225-L227
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Mimura Takashi,Hiyamizu Satoshi,Fujii Toshio,Nanbu Kazuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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