The Effects of Cu Diffusion in Cu/TiN/SiO2/Si Capacitors-Reference-Cited by-同舟云学术

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The Effects of Cu Diffusion in Cu/TiN/SiO2/Si Capacitors

Published:1999-10-15 Issue:Part 1, No. 10 Volume:38 Page:5792-5795
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kwak Mi-Young,Shin Dong-Hyuk,Kang Tae-Won,Kim Ki-Nam

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface-Functionalized Interfacial Self-Assembled Monolayers as Copper Electrode Diffusion Barriers for Oxide Semiconductor Thin-Film Transistor;ACS Applied Electronic Materials;2019-02-13

2. Effects of Copper Migration on the Reliability of Through-Silicon Via (TSV);IEEE Transactions on Device and Materials Reliability;2018-12

3. Reliability Evaluation of Copper (Cu) Through-Silicon Vias (TSV) Barrier and Dielectric Liner by Electrical Characterization and Physical Failure Analysis (PFA);2017 IEEE 67th Electronic Components and Technology Conference (ECTC);2017-05

4. TiN, TaN and WxN as diffusion barriers for Cu on SiO2: capacitance–voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress;Thin Solid Films;2004-02

5. Physics of Copper in Silicon;Journal of The Electrochemical Society;2002

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