Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication and structure manipulation at nanoscale—A focused ion beam (FIB) approach;Reference Module in Materials Science and Materials Engineering;2023
2. Fabrication and Time-Dependent Analysis of Micro-Hole in GaAs(100) Single Crystal Wafer Using Wet Chemical Etching Method;Korean Journal of Materials Research;2019-03-31
3. Some Fundamental Aspects of Plasma-Assisted Etching;Handbook of Advanced Plasma Processing Techniques;2000
4. Ion beams in silicon processing and characterization;Journal of Applied Physics;1997-05-15
5. Characteristics of AuSi liquid metal alloy ion source with coupling extractor electrodes;Review of Scientific Instruments;1996-10
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