Some Fundamental Aspects of Plasma-Assisted Etching-Reference-Cited by-同舟云学术

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Some Fundamental Aspects of Plasma-Assisted Etching

Published:2000 Issue: Volume: Page:1-32
ISSN:
Container-title:Handbook of Advanced Plasma Processing Techniques
language:
Short-container-title:

Author:

Coburn J. W.

Publisher

Springer Berlin Heidelberg

Link

http://link.springer.com/content/pdf/10.1007/978-3-642-56989-0_1.pdf

Reference35 articles.

1. S.M. Irving, Solid State Technol. 14-5, 47 (1971).

2. S.M. Irving, K.E. Lemons and G.E. Bobos, US Patent 3,615,596 (filed 1968).

3. N. Hosokawa, N. Matsuzaki and T. Asamaki, Jpn. J. Appl. Phys. Suppl. 2, Part 1, 435 (1974).

4. L. Zielinski, and G.C. Schwartz, Electrochem. Soc. Ext. Abstr. 75-1, 117 (1975)

5. H.N. Yu, R.H. Dennard, T.H.P. Chang, C.M. Osburn, V. Dilonardo, and H.E. Luhn, J. Vac. Sci. Technol. 12, 1297 (1975).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface and Thin Film Analysis;Nonthermal Plasma Chemistry and Physics;2012-11-13

2. Ion energy distribution control in single and dual frequency capacitive plasma sources;Plasma Sources Science and Technology;2005-01-13

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