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Flexible One Diode–One Resistor Crossbar Resistive-Switching Memory

  • Published:2012-04-20 Issue: Volume:51 Page:04DD09
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:en
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Huang Jiun-Jia,Hou Tuo-Hung,Hsu Chung-Wei,Tseng Yi-Ming,Chang Wen-Hsiung,Jang Wen-Yueh,Lin Chen-Hsi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Crosstalk Analysis in ReRAM Passive Crossbar Arrays;2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID);2024-01-06

2. Flexible Oxide Thin Film Transistors, Memristors, and Their Integration;Advanced Functional Materials;2023-03-26

3. A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory;2022 International Applied Computational Electromagnetics Society Symposium (ACES-China);2022-12-09

4. Multiphysics Computation for Resistive Random Access Memories With Different Metal Oxides;IEEE Transactions on Electron Devices;2022-01

5. Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application;physica status solidi (RRL) – Rapid Research Letters;2021-07-26
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