A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory-Reference-Cited by-同舟云学术

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A Compact Model for Electro-Thermal Co-Simulation of One Diode-One Resistor Random Access Resistive Memory

Published:2022-12-09 Issue: Volume: Page:
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Container-title:2022 International Applied Computational Electromagnetics Society Symposium (ACES-China)
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Author:

Zhai Xingyu¹,Yin Wen-Yan²,Yang Yanbin³,Chen Wenchao¹

Affiliation:

1. ZJU-UIUC Institute, International Campus, Zhejiang University,Haining,China,314400

2. Zhejiang University,College of Information Science and Electronic Engineering,Hangzhou,China,310027

3. The Zhijiang Intelligence Institute in Chengdu Tianfu District,Chengdu,China,610000

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10064683/10064686/10064737.pdf?arnumber=10064737

Reference11 articles.

1. Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

2. Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing

3. Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory;huang;Japanese Journal of Applied Physics,2012

4. Memristive devices for computing

5. High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS

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