Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching-Reference-Cited by-同舟云学术

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Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching

Published:2012-10-25 Issue: Volume:51 Page:111002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Shang,Ishikawa Kenji,Lu Yi,Kometani Ryosuke,Kondo Hiroki,Tokuda Yutaka,Egawa Takashi,Amano Hiroshi,Sekine Makoto,Hori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Performance of Low-Leakage-Current Normally off p-GaN Gate HEMTs Using NH₃ Plasma Pretreatment;IEEE Transactions on Electron Devices;2023-09

2. High-speed etching of gallium nitride substrate using hydrogen-contained atmospheric-pressure plasma;Applied Physics Express;2023-04-01

3. Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication;Electronic Materials Letters;2023-03-11

4. InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall;Applied Physics Express;2022-07-25

5. Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls;Micro and Nano Engineering;2021-06

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