Extremely Small Proximity Effect in 30 keV Electron Beam Drawing with Thin Calixarene Resist for 20×20 nm2Pitch Dot Arrays
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=2/a=027003/pdf
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1. Patterning of granular magnetic media with a focused ion beam to produce single-domain islands at <140 Gbit/in/sup 2/
2. Fabrication of Submicron Pattern with an EB Lithographic System Using a Field Emission (FE) Electron Gun
3. Sub-10-nm-Scale Lithography Usingp-chloromethyl-methoxy-calix[4]arene Resist
4. High Density Mastering Using Electron Beam
5. Possibility to form an ultrahigh packed fine pit and dot arrays for future storage using EB writing
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