Simulation of Optical Constants Range of High-Transmittance Attenuated Phase-Shifting Masks Used in KrF Laser and ArF Laser
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stochastic Patterning Simulation Using Attenuated Phase-Shift Mask for Extreme Ultraviolet Lithography;Applied Physics Express;2013-09-01
2. Very Thin Extreme Ultraviolet Mask Absorber Material for Extremely Fine Pitch Patterning;Applied Physics Express;2013-07-01
3. Electronic structure and x-ray-absorption near-edge structure of amorphous Zr-oxide and Hf-oxide thin films: A first-principles study;Journal of Applied Physics;2005-04
4. Low k 1 lithography patterning option for the 90-nm and 65-nm nodes;SPIE Proceedings;2003-08-26
5. Simulation and characterization of silicon oxynitrofluoride films as a phase-shift mask material for 157-nm optical lithography;SPIE Proceedings;2002-07-15
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