Electronic structure and x-ray-absorption near-edge structure of amorphous Zr-oxide and Hf-oxide thin films: A first-principles study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1884268
Reference12 articles.
1. Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application
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3. Simulation of Optical Constants Range of High-Transmittance Attenuated Phase-Shifting Masks Used in KrF Laser and ArF Laser
4. Optical properties of Si–O–N–F films as a phase shift mask material for 157 nm optical lithography
5. Discrete Variational Xα Cluster Calculations. I. Application to Metal Clusters
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