Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength-Reference-Cited by-同舟云学术

Cross Phase Modulation Efficiency Enhancement in In0.8Ga0.2As/Al0.5Ga0.5As/AlAs0.56Sb0.44Coupled Double Quantum Wells by Tailoring Interband Transition Wavelength

Published:2009-03-19 Issue: Volume:2 Page:042201
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Gozu Shin-ichiro,Mozume Teruo,Akimoto Ryoichi,Akita Kazumichi,Cong Guangwei,Ishikawa Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=4/a=042201/pdf

Reference10 articles.

1. Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs–AlAs–AlAsSb Coupled Quantum Wells

2. Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells

3. Ultrafast all-optical switching at 1.3 [micro sign]m/1.55 [micro sign]m using novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

4. Ultrafast All-Optical Refractive Index Modulation in Intersubband Transition Switch Using InGaAs/AlAs/AlAsSb Quantum Well

5. All‐optical modulation using ann‐doped quantum‐well structure

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