Fabrication of Local Ge-on-Insulator Structures by Lateral Liquid-Phase Epitaxy: Effect of Controlling Interface Energy between Ge and Insulators on Lateral Epitaxial Growth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=6/a=066502/pdf
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1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
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3. High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates
4. Integration of Germanium-on-Insulator and Silicon MOSFETs on a Silicon Substrate
5. High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
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