In situDoped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor-Reference-Cited by-同舟云学术

In situDoped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

Published:2008-04-25 Issue:4 Volume:47 Page:2564-2568
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Okamoto Hiroki,Hokazono Akira,Adachi Kanna,Yasutake Nobuaki,Itokawa Hiroshi,Okamoto Shintaro,Kondo Masaki,Tsujii Hideji,Ishida Tatsuya,Aoki Nobutoshi,Fujiwara Makoto,Kawanaka Shigeru,Azuma Atsushi,Toyoshima Yoshiaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference5 articles.

1. Scalability of Stress Induced by Contact-Etch-Stop Layers: A Simulation Study

2. A 90-nm Logic Technology Featuring Strained-Silicon

3. Nickel Germanosilicide Contacts Formed on Heavily Boron Doped<tex>$rm Si_1-xrm Ge_x$</tex>Source/Drain Junctions for Nanoscale CMOS

4. A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits

5. Potential of and Issues with Multiple-Stressor Technology in High-Performance 45 nm Generation Devices

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