Nickel Germanosilicide Contacts Formed on Heavily Boron Doped<tex>$rm Si_1-xrm Ge_x$</tex>Source/Drain Junctions for Nanoscale CMOS
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31407/01459116.pdf?arnumber=1459116
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effective Suppression of Vt Roll-Up for pMOS With Embedded SiGe Source/Drain;IEEE Transactions on Electron Devices;2024-07
2. Impact of the Si Content on the Electrical Properties of NiSi x Ge1–x Source/Drain Contact Metal for Ge pMOSFETs;IEEE Transactions on Electron Devices;2021-11
3. Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application;ECS Transactions;2019-12-17
4. Impacts of Ge Preamorphization Implantation and Si Capping on the Specific Contact Resistivity of Ni(Pt)SiGe/p+-SiGe Contacts;IEEE Transactions on Electron Devices;2019-10
5. Sub- $10^{-\textsf{9}}\,\,\Omega\cdot{\text{cm}}^{\textsf{2}}$ Specific Contact Resistivity (Down to $\textsf{4.4}\times\textsf{10}^{-\textsf{10}}\,\,\Omega\cdot\textsf{cm}^{\textsf{2}}$ ) for Metal Contact on Ga and Sn Surface-Segregated GeSn Film;IEEE Transactions on Electron Devices;2018-12
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