AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers

Published:2008-09-12 Issue:9 Volume:47 Page:7069-7072
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chang Edward Yi,Huang Jui-Chien,Lin Yueh-Chin,Hsieh Yen-Chang,Chang Chia-Yuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference11 articles.

1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

2. Transmission electron microscopy study on defect reduction in GaAs on Si heteroepitaxial layers grown by metalorganic vapor phase epitaxy

3. Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate

4. Metamorphic In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on germanium substrates

5. Antiphase disorder in GaAs/Ge heterostructures for solar cells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance InGaAs HEMTs on Si Substrates for RF Applications;Electronics;2022-01-14

2. High-Performance In 0.23 Ga 0.77 As Channel MOSFETs with High Current Ratio I on / I off Grown on Semi-insulating GaAs Substrates by MOCVD;Chinese Physics Letters;2015-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3