Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate-Reference-Cited by-同舟云学术

Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate

Published:2007-02-19 Issue:8 Volume:90 Page:083507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hsieh Y. C.,Chang E. Y.,Luo G. L.,Pilkuhn M. H.,Tang S. S.,Chang C. Y.,Yang J. Y.,Chung H. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2475361

Reference12 articles.

1. Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

2. Metal–Germanium–Metal Photodetectors on Heteroepitaxial Ge-on-Si With Amorphous Ge Schottky Barrier Enhancement Layers

3. Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures

4. Growth and Characterization of GaAs Layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition

5. Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

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