A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Stability Analysis of Graded-Channel Dual-Material Double-Gate (GCDMDG) MOSFET for Analog Application;Lecture Notes in Electrical Engineering;2021-12-14
2. An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers;Microsystem Technologies;2018-12-01
3. 2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET;Journal of Computational Electronics;2017-06-05
4. Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs;Superlattices and Microstructures;2017-06
5. 2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs;IEEE Transactions on Electron Devices;2016-03
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