An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s00542-018-4227-1.pdf
Reference22 articles.
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3. Chiang TK (2008) A new analytical subthreshold behavior model for single-halo, dual-material gate silicon-on-insulator metal oxide semiconductor field effect transistor. Jpn J Appl Phys 47:8297–8304
4. Dey A, Chakravorty A, DasGupta V, DasGupta A (2008) Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T double-gate MOSFETs. IEEE Trans Electron Devices 55:3442–3449
5. Esqueda IS (2015) The impact of stress-induced defects on MOS electrostatics and short-channel effects. Solid-State Electron 103:167–172
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