The impact of stress-induced defects on MOS electrostatics and short-channel effects-Reference-Cited by-同舟云学术

The impact of stress-induced defects on MOS electrostatics and short-channel effects

Published:2015-01 Issue: Volume:103 Page:167-172
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Esqueda Ivan S.

Funder

DARPA-Integrity and Reliability of Integrated Circuits program

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

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2. Small-geometry MOS transistors: physics and modeling of surface- and buried-channel MOSFET’s;Nguyen,1984

3. Short-channel effect in fully depleted SOI MOSFETs;Young;IEEE Trans Electron Dev,1989

4. Scaling the Si MOSFET: from bulk to SOI to bulk;Yan;IEEE Trans Electron Dev,1992

5. Scaling theory for double-gate SOI MOSFET’s;Suzuki;IEEE Trans Electron Dev,1993

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