Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor-Reference-Cited by-同舟云学术

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Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

Published:2008-04-25 Issue:4 Volume:47 Page:2538-2543
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kosemura Daisuke,Kakemura Yasuto,Yoshida Tetsuya,Ogura Atsushi,Kohno Masayuki,Nishita Tatsuo,Nakanishi Toshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

2. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy

3. Characterization of Si/GexSi1−x structures by micro-Raman imaging

4. Measurement of in-plane and depth strain profiles in strained-Si substrates

5. Mechanical and Electrical Analysis of Strained Liner Effect in 35 nm Fully Depleted Silicon-on-Insulator Devices with Ultra Thin Silicon Channels

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing;Materials Science in Semiconductor Processing;2020-12

2. Micro-Raman spectroscopic analysis of single crystal silicon microstructures for surface stress mapping;Japanese Journal of Applied Physics;2015-09-09

3. (Invited) Anisotropoic Strain Evaluation in the Finite Si Area by Surface Plasmon Enhanced Raman Spectroscopy;ECS Transactions;2014-08-12

4. High-resolution X-ray microdiffraction from a locally strained SOI with a width of 150 nm;Journal of Physics: Conference Series;2014-04-10

5. Channel Strain Measurement of Si1-xCxStructures: Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation;Applied Physics Express;2013-06-01

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