Decreasing Dark Current of Complementary Metal Oxide Semiconductor Image Sensors by New Postmetallization Annealing and Ultraviolet Curing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference10 articles.
1. A CMOS image sensor with a simple fixed-pattern-noise-reduction technology and a hole accumulation diode
2. Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image Sensors
3. The Analysis of Dark Signals in the CMOS APS Imagers From the Characterization of Test Structures
4. Reduction of Random Noise in Complementary Metal Oxide Semiconductor Image Sensors by Gate Oxide Interface Control
5. Influence of Deposition Temperature, Gas Pressure, Gas Phase Composition, and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride Layers
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