Hydrogen diffusion behavior in CH2P-molecular-ion-implanted silicon wafers for CMOS image sensors
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference39 articles.
1. Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors
2. The Analysis of Dark Signals in the CMOS APS Imagers From the Characterization of Test Structures
3. Proximity gettering of slow diffuser contaminants in CMOS image sensors
4. Proceedings of the 2015 IEEE International Solid-State Circuits Conference;Suzuki,2015
5. Proceedings of the 63rd IEEE International Electron Devices Meeting;Tsugawa,2017
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation;Sensors;2022-10-28
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