Growth of GaNAs/GaAs Multiple Quantum Well by Molecular Beam Epitaxy Using Modulated N Radical Beam Source-Reference-Cited by-同舟云学术

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Growth of GaNAs/GaAs Multiple Quantum Well by Molecular Beam Epitaxy Using Modulated N Radical Beam Source

Published:2006-04-25 Issue:4B Volume:45 Page:3540-3543
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takao Katsuhiro,Fujii Kensuke,Miyagawa Hayato,Mizumaki Masaichiro,Sakata Osami,Tsurumachi Noriaki,Itoh Hiroshi,Sumida Naoto,Nakanishi Shunsuke,Akiyama Hidefumi,Koshiba Shyun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroluminescence of GaNAs/GaAs MQWs p–i–n junctions grown by RF-MBE using modulated nitrogen radical beam source;Journal of Crystal Growth;2013-09

2. Abnormal broadening of the optical transitions in (Ga,As)N/GaAs quantum wells;Physical Review B;2012-01-10

3. Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junction;Transactions of the Materials Research Society of Japan;2012

4. Effects of Mg doping on optical and electrical properties of GaNAs multiple quantum wells;physica status solidi (c);2011-01-13

5. Investigation of the confinement potential within GaNAs/GaAs multiple quantum wells;physica status solidi (c);2011-01-10

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