Effects of Mg doping on optical and electrical properties of GaNAs multiple quantum wells-Reference-Cited by-同舟云学术

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Effects of Mg doping on optical and electrical properties of GaNAs multiple quantum wells

Published:2011-01-13 Issue:2 Volume:8 Page:420-422
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Shiraga Masahiro,Nakai Yuko,Hirashima Tomohiko,Kittaka Akinobu,Ebisu Mari,Takahashi Naoshi,Noda Takeshi,Ohmori Masato,Akiyama Hidefumi,Tsurumachi Noriaki,Nakanishi Shunsuke,Miyagawa Hayato,Itoh Hiroshi,Koshiba Shyun

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2023-03

2. Electroluminescence of GaNAs/GaAs MQWs p–i–n junctions grown by RF-MBE using modulated nitrogen radical beam source;Journal of Crystal Growth;2013-09

3. Electrical and Optical Properties of GaNAs/GaAs MQW p-i-n Junction;Transactions of the Materials Research Society of Japan;2012

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