Electroluminescence of GaNAs/GaAs MQWs p–i–n junctions grown by RF-MBE using modulated nitrogen radical beam source-Reference-Cited by-同舟云学术

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Electroluminescence of GaNAs/GaAs MQWs p–i–n junctions grown by RF-MBE using modulated nitrogen radical beam source

Published:2013-09 Issue: Volume:378 Page:150-153
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ohta Natsumi,Arimoto Kohei,Shiraga Masahiro,Ishii Kenta,Inada Masatoshi,Yanai Shunsuke,Nakai Yuko,Akiyama Hidefumi,Mochizuki Toshimitsu,Takahashi Toshio,Takahashi Naoshi,Miyagawa Hayato,Tsurumachi Noriaki,Nakanishi Shunsuke,Koshiba Shyun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

2. Optical investigation of GaAs1−xNx/GaAs heterostructure properties

3. Electric properties of RF‐MBE InGaAsN grown layer

4. Hall electron mobility versus N spatial distribution in III–V–N systems

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Density functional theory study of quaternary InPBiN alloys lattice matched to InP substrate: Structural, electronic and optical properties;Optik;2022-07

2. Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well;Superlattices and Microstructures;2017-02

3. Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55μm;Materials Science in Semiconductor Processing;2014-12

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