Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory-Reference-Cited by-同舟云学术

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Application of HfSiON to Deep-Trench Capacitors of Sub-45-nm-Node Embedded Dynamic Random-Access Memory

Published:2006-04-25 Issue:4B Volume:45 Page:3165-3169
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ando Takashi,Sato Naoyuki,Hiyama Susumu,Hirano Tomoyuki,Nagaoka Kojiro,Abe Hitoshi,Okuyama Atsushi,Ugajin Hajime,Tai Kaori,Fujita Shigeru,Watanabe Koji,Katsumata Ryota,Idebuchi Jun,Suzuki Takashi,Hasegawa Toshiaki,Iwamoto Hayato,Kadomura Shingo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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