High-Quality HfO[sub 2] Formation using Zr Reduced High-Purity TEMAH-Reference-Cited by-同舟云学术

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High-Quality HfO[sub 2] Formation using Zr Reduced High-Purity TEMAH

Published:2008 Issue:7 Volume:11 Page:H204
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Miya Hironobu,Asai Masayuki,Hirahara Kazuhiro,Kinoshita Yuta,Hirose Fumihiko

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference12 articles.

1. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

2. Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

3. Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water

4. Atomic Layer Deposition of HfO2Using Hf[N(C2H5)2]4and H2O

5. Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO2 Related High-k Dielectrics Interfaces

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