Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature-Reference-Cited by-同舟云学术

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Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature

Published:2006-10-06 Issue:10A Volume:45 Page:7661-7666
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Masui Hisashi,Schmidt Mathew C.,Chakraborty Arpan,Nakamura Shuji,DenBaars Steven P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates;Chinese Physics B;2015-06-25

2. Reconstructions and origin of surface states on AlN polar and nonpolar surfaces;Physical Review B;2009-10-19

3. A detailed study on the requirements for angular homogeneity of phosphor converted high power white LED light sources;Optical Materials;2009-04

4. Improvement of the surface morphology ofa -plane InN using low-temperature InN buffer layers;physica status solidi (c);2008-05

5. Polarization-Maintaining Mechanism of a Birefringence-Reduced Plastic Optical Fiber Fabricated Using Poly(methyl methacrylate/benzyl methacrylate) Copolymer;The Journal of Physical Chemistry C;2008-04-19

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