Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/7/077801/pdf
Reference27 articles.
1. Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells
4. Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature
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