Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO$_{2}$/Si Metal–Oxide–Semiconductor Field-Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/4/i=10/a=101101/pdf
Reference12 articles.
1. Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
2. Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure
3. Dipole scattering in highly polar semiconductor alloys
4. Dipole formation at direct-contact HfO2∕Si interface
5. Two-step behavior of initial oxidation at HfO2∕Si interface
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3. InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding;Journal of Applied Physics;2019-03-21
4. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers;Applied Surface Science;2018-06
5. Electric-field-controlled interface dipole modulation for Si-based memory devices;Scientific Reports;2018-05-31
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