Resists and Other Critical Issues in 157-nm Lithography.-Reference-Cited by-同舟云学术

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Resists and Other Critical Issues in 157-nm Lithography.

Published:2000 Issue:3 Volume:13 Page:369-372
ISSN:0914-9244
Container-title:Journal of Photopolymer Science and Technology
language:en
Short-container-title:J. Photopol. Sci. Technol.

Author:

Rothschild M.,Bloomstein T. M.,Fedynyshyn T. H.,Kunz R. R.,Liberman V.,Switkes M.

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Link

http://www.jstage.jst.go.jp/article/photopolymer1988/13/3/13_3_369/_pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hardmask technology for sub-100 nm lithographic imaging;Advances in Resist Technology and Processing XX;2003-06-11

2. Tetrafluoroethylene-based Fluoropolymers for 157-nm Resist Materials;Journal of Photopolymer Science and Technology;2003

3. Introducing 157 nm Full Field Lithography;Journal of Photopolymer Science and Technology;2003

4. Polymers, Photoresponsive (in Electronic Applications);Encyclopedia of Physical Science and Technology;2003

5. Progress in 157-nm lithography development for 70-nm node;Microelectronic Engineering;2002-07

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