Evaluation of a Negative 193nm DUV Resist for the 45nm Node: Lithography, Degradation Kinetics during Etch and Implant.-Reference-Cited by-同舟云学术

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Evaluation of a Negative 193nm DUV Resist for the 45nm Node: Lithography, Degradation Kinetics during Etch and Implant.

Published:2007 Issue:3 Volume:20 Page:345-352
ISSN:0914-9244
Container-title:Journal of Photopolymer Science and Technology
language:en
Short-container-title:J. Photopol. Sci. Technol.

Author:

May Michael J.,Derrough Semir,Bazin Arnaud,Mortini Bénédicte,Brochon Cyril,Hodziioannou Georges

Publisher

Technical Association of Photopolymers, Japan

Subject

Materials Chemistry,Organic Chemistry,Polymers and Plastics

Link

http://www.jstage.jst.go.jp/article/photopolymer/20/3/20_3_345/_pdf

Reference14 articles.

1. Chemical amplification resists: History and development within IBM

2. 2. R. Tiron et Al., Ultra High Resolution Pattern Using Electron Beam Lithography and HF Wet Etching, JVSTB, 2005.

3. 3. Kyoko Kojima et Al., Negative tone poly(phenol)l resist based on chemically amplified polarity change reaction with sub-50 nm resolution capability, Proc. Of SPIE, 6153 (2006).

4. 4. Shigeyuki Iwasa et Al., Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography, Proc. Of SPIE, 3333 (1998) 417-424.

5. 5. H. Hada et Al., Chemically amplifies negative tone resist using novel acryl polymer for 193 nm lithography, Proc. Of SPIE, 3678 (1999) 676.

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2. Negative tone development process for ArF immersion extension;SPIE Proceedings;2014-10-08

3. Evaluation of novel hydrophilic derivatives for chemically amplified EUV resists;SPIE Proceedings;2014-03-27

4. Evaluation of alcoholic hydroxyl derivatives for chemically amplified extreme ultraviolet resist;Advances in Resist Materials and Processing Technology XXVI;2009-03-13

5. Relationship between Sensitivities of Chemically Amplified Resist Based on Adamantane Derivatives upon Exposure to ArF Excimer Laser, Electron Beam, and Extreme Ultraviolet Radiation;Applied Physics Express;2008-05-16

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