Impact of developers on roughness of dissolution front in electron-beam resists
Author:
Publisher
Technical Association of Photopolymers, Japan
Subject
Materials Chemistry,Organic Chemistry,Polymers and Plastics
Link
http://www.jstage.jst.go.jp/article/photopolymer/17/4/17_4_557/_pdf
Reference30 articles.
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2. Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance
3. 3. M. I. Sanchez, W. D. Hinsberg, F. A. Houle, J. A. Hoffnagle, H. Ito and C. Nguyen, Proc. SPIE 3678 (1999) 160.
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5. Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method
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3. Study of Development Processes for ZEP-520 as a High-Resolution Positive and Negative Tone Electron Beam Lithography Resist;Japanese Journal of Applied Physics;2012-06-20
4. Study of Development Processes for ZEP-520 as a High-Resolution Positive and Negative Tone Electron Beam Lithography Resist;Japanese Journal of Applied Physics;2012-06-01
5. Very high sensitivity ZEP resist using MEK:MIBK developer;Micro & Nano Letters;2011
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