Novel Rinse Liquid for sub-90nm Lithography
Author:
Publisher
Technical Association of Photopolymers, Japan
Subject
Materials Chemistry,Organic Chemistry,Polymers and Plastics
Link
http://www.jstage.jst.go.jp/article/photopolymer/16/3/16_3_363/_pdf
Reference8 articles.
1. 1. T. Tanaka et al., US Pat. 5,326,672
2. 2. T. Tanaka et al., US Pat. 5,374,502
3. Collapse behavior of single layer 193- and 157-nm resists: use of surfactants in the rinse to realize the sub-130-nm nodes
4. Preparation of high-aspect-ratio 70-nm patterns by supercritical drying technique in proximity x-ray lithography
5. Characterization and improvement of resist pattern collapse on ArF (193 nm) organic B.A.R.C.
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